Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBJ1506-F

GBJ1506-F

BRIDGE RECT 1PHASE 600V 15A GBJ

Diodes Incorporated
2,053 -

RFQ

GBJ1506-F

Ficha técnica

Tube - Active Single Phase Standard 600 V 15 A 1.05 V @ 7.5 A 10 µA @ 600 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBU2510-G

GBU2510-G

BRIDGE RECT 1PHASE 1KV 25A GBU

Comchip Technology
2,336 -

RFQ

GBU2510-G

Ficha técnica

Tube - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBJ3510-BP

GBJ3510-BP

BRIDGE RECT 1PHASE 1KV 35A GBJ

Micro Commercial Co
3,519 -

RFQ

GBJ3510-BP

Ficha técnica

Tube - Active Single Phase Standard 1 kV 35 A 1.05 V @ 17.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
KBU1010-G

KBU1010-G

BRIDGE RECT 1PHASE 1KV 10A KBU

Comchip Technology
2,586 -

RFQ

KBU1010-G

Ficha técnica

Tray - Active Single Phase Standard 1 kV 10 A 1 V @ 5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
GBJ2508-F

GBJ2508-F

BRIDGE RECT 1PHASE 800V 25A GBJ

Diodes Incorporated
2,374 -

RFQ

GBJ2508-F

Ficha técnica

Tube - Active Single Phase Standard 800 V 25 A 1.05 V @ 12.5 A 10 µA @ 800 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ5006-BP

GBJ5006-BP

BRIDGE RECT 1PHASE 600V 50A GBJ

Micro Commercial Co
2,114 -

RFQ

GBJ5006-BP

Ficha técnica

Tube - Active Single Phase Standard 600 V 50 A 1.1 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
TS25P05G

TS25P05G

BRIDGE RECT 1P 600V 25A TS-6P

Taiwan Semiconductor Corporation
3,447 -

RFQ

TS25P05G

Ficha técnica

Tube - Active Single Phase Standard 600 V 25 A 1.1 V @ 15 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
PB4010-E3/45

PB4010-E3/45

BRIDGE RECT 1P 1KV 40A PB

Vishay General Semiconductor - Diodes Division
2,895 -

RFQ

PB4010-E3/45

Ficha técnica

Tube isoCink+™ Active Single Phase Standard 1 kV 40 A 1.1 V @ 20 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, PB
GBPC2508W

GBPC2508W

BRIDGE RECT 1P 800V 25A GBPC-W

GeneSiC Semiconductor
2,131 -

RFQ

GBPC2508W

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1.1 V @ 1.2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC3506W-G

GBPC3506W-G

BRIDGE RECT 1P 600V 35A GBPC-W

Comchip Technology
3,973 -

RFQ

GBPC3506W-G

Ficha técnica

Tray - Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC5010W-G

GBPC5010W-G

BRIDGE RECT 1P 1KV 50A GBPC-W

Comchip Technology
3,470 -

RFQ

GBPC5010W-G

Ficha técnica

Tray - Active Single Phase Standard 1 kV 50 A 1.1 V @ 25 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC5006-G

GBPC5006-G

BRIDGE RECT 1PHASE 600V 50A GBPC

Comchip Technology
3,432 -

RFQ

GBPC5006-G

Ficha técnica

Tray - Active Single Phase Standard 600 V 50 A 1.1 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC5006W-G

GBPC5006W-G

BRIDGE RECT 1P 600V 50A GBPC-W

Comchip Technology
2,748 -

RFQ

GBPC5006W-G

Ficha técnica

Tray - Active Single Phase Standard 600 V 50 A 1.1 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2510-E4/51

GBPC2510-E4/51

BRIDGE RECT 1PHASE 1KV 25A GBPC

Vishay General Semiconductor - Diodes Division
3,443 -

RFQ

GBPC2510-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC3510-E4/51

GBPC3510-E4/51

BRIDGE RECT 1PHASE 1KV 35A GBPC

Vishay General Semiconductor - Diodes Division
2,974 -

RFQ

GBPC3510-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
VS-GBPC2502A

VS-GBPC2502A

BRIDGE RECT 1P 200V 25A GBPC-A

Vishay General Semiconductor - Diodes Division
2,541 -

RFQ

VS-GBPC2502A

Ficha técnica

Tray VS-GBPC Active Single Phase Standard 200 V 25 A - 2 mA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-A
KBPC2510-G

KBPC2510-G

BRIDGE RECT 1PHASE 1KV 25A KBPC

Comchip Technology
3,782 -

RFQ

KBPC2510-G

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC
KBPC5010-G

KBPC5010-G

BRIDGE RECT 1PHASE 1KV 50A KBPC

Comchip Technology
500 -

RFQ

KBPC5010-G

Ficha técnica

Tray - Active Single Phase Standard 1 kV 50 A 1.1 V @ 25 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC
VS-36MT60

VS-36MT60

BRIDGE RECT 3PHASE 600V 35A D-63

Vishay General Semiconductor - Diodes Division
300 -

RFQ

VS-36MT60

Ficha técnica

Bulk - Active Three Phase Standard 600 V 35 A - 10 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 5-Square, D-63
ABS10

ABS10

BRIDGE RECT 1PHASE 1KV 500MA ABS

SMC Diode Solutions
3,289 -

RFQ

ABS10

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 1 kV 500 mA 1.1 V @ 800 mA 5 µA @ 1000 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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