Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBU602G T0G

KBU602G T0G

BRIDGE RECT 1PHASE 100V 6A KBU

Taiwan Semiconductor Corporation
2,047 -

RFQ

KBU602G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 100 V 6 A 1.1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU603G T0G

KBU603G T0G

BRIDGE RECT 1PHASE 200V 6A KBU

Taiwan Semiconductor Corporation
3,686 -

RFQ

KBU603G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 200 V 6 A 1.1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU604G T0G

KBU604G T0G

BRIDGE RECT 1PHASE 400V 6A KBU

Taiwan Semiconductor Corporation
2,292 -

RFQ

KBU604G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 400 V 6 A 1.1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU605G T0G

KBU605G T0G

BRIDGE RECT 1PHASE 600V 6A KBU

Taiwan Semiconductor Corporation
2,400 -

RFQ

KBU605G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 600 V 6 A 1.1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU606G T0G

KBU606G T0G

BRIDGE RECT 1PHASE 800V 6A KBU

Taiwan Semiconductor Corporation
3,126 -

RFQ

KBU606G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 800 V 6 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU607G T0G

KBU607G T0G

BRIDGE RECT 1PHASE 1KV 6A KBU

Taiwan Semiconductor Corporation
2,430 -

RFQ

KBU607G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 1 kV 6 A 1.1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU801G T0G

KBU801G T0G

BRIDGE RECT 1PHASE 50V 8A KBU

Taiwan Semiconductor Corporation
2,772 -

RFQ

KBU801G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 50 V 8 A 1.1 V @ 8 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU802G T0G

KBU802G T0G

BRIDGE RECT 1PHASE 100V 8A KBU

Taiwan Semiconductor Corporation
2,570 -

RFQ

KBU802G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 100 V 8 A 1.1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU803G T0G

KBU803G T0G

BRIDGE RECT 1PHASE 200V 8A KBU

Taiwan Semiconductor Corporation
2,533 -

RFQ

KBU803G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 200 V 8 A 1.1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU804G T0G

KBU804G T0G

BRIDGE RECT 1PHASE 400V 8A KBU

Taiwan Semiconductor Corporation
2,956 -

RFQ

KBU804G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 400 V 8 A 1.1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU805G T0G

KBU805G T0G

BRIDGE RECT 1PHASE 600V 8A KBU

Taiwan Semiconductor Corporation
3,180 -

RFQ

KBU805G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 600 V 8 A 1.1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU806G T0G

KBU806G T0G

BRIDGE RECT 1PHASE 800V 8A KBU

Taiwan Semiconductor Corporation
3,032 -

RFQ

KBU806G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 800 V 8 A 1.1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU807G T0G

KBU807G T0G

BRIDGE RECT 1PHASE 1KV 8A KBU

Taiwan Semiconductor Corporation
3,622 -

RFQ

KBU807G T0G

Ficha técnica

Tray - Obsolete Single Phase Standard 1 kV 8 A 1.1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
MB1M-G

MB1M-G

BRIDGE DIODE GPP 0.8A 100V MBM

Comchip Technology
3,013 -

RFQ

MB1M-G

Ficha técnica

Tube - Obsolete Single Phase Standard 100 V 800 mA 1.1 V @ 800 mA 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.200, 5.08mm)
MB2M-G

MB2M-G

BRIDGE DIODE GPP 0.8A 200V MBM

Comchip Technology
2,197 -

RFQ

MB2M-G

Ficha técnica

Tube - Obsolete Single Phase Standard 200 V 800 mA 1.1 V @ 800 mA 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.200, 5.08mm)
MB8M-G

MB8M-G

BRIDGE DIODE GPP 0.8A 800V MPM

Comchip Technology
3,947 -

RFQ

MB8M-G

Ficha técnica

Tube - Obsolete Single Phase Standard 800 V 800 mA 1.1 V @ 800 mA 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.200, 5.08mm)
RS502-G

RS502-G

BRIDGE RECTIFIER

Comchip Technology
3,145 -

RFQ

RS502-G

Ficha técnica

Tray - Obsolete Single Phase Standard 100 V 5 A 1 V @ 5 A 10 µA @ 100 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, RS-5
RS503-G

RS503-G

BRIDGE RECTIFIER

Comchip Technology
3,883 -

RFQ

RS503-G

Ficha técnica

Tray - Obsolete Single Phase Standard 200 V 5 A 1 V @ 5 A 10 µA @ 200 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, RS-5
RS505-G

RS505-G

BRIDGE RECTIFIER

Comchip Technology
3,981 -

RFQ

RS505-G

Ficha técnica

Tray - Obsolete Single Phase Standard 600 V 5 A 1 V @ 5 A 10 µA @ 600 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, RS-5
RS506-G

RS506-G

BRIDGE RECTIFIER

Comchip Technology
2,256 -

RFQ

RS506-G

Ficha técnica

Tray - Obsolete Single Phase Standard 800 V 5 A 1 V @ 5 A 10 µA @ 800 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, RS-5
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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