Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBP303G C2

KBP303G C2

BRIDGE RECT 1PHASE 200V 3A KBP

Taiwan Semiconductor Corporation
3,168 -

RFQ

KBP303G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 200 V 3 A 1.1 V @ 3 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP303G C2G

KBP303G C2G

BRIDGE RECT 1PHASE 200V 3A KBP

Taiwan Semiconductor Corporation
2,116 -

RFQ

KBP303G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 200 V 3 A 1.1 V @ 3 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP304G C2

KBP304G C2

BRIDGE RECT 1PHASE 400V 3A KBP

Taiwan Semiconductor Corporation
3,078 -

RFQ

KBP304G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 400 V 3 A 1.1 V @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP304G C2G

KBP304G C2G

BRIDGE RECT 1PHASE 400V 3A KBP

Taiwan Semiconductor Corporation
3,041 -

RFQ

KBP304G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 400 V 3 A 1.1 V @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP305G C2

KBP305G C2

BRIDGE RECT 1PHASE 600V 3A KBP

Taiwan Semiconductor Corporation
3,973 -

RFQ

KBP305G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 600 V 3 A 1.1 V @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP305G C2G

KBP305G C2G

BRIDGE RECT 1PHASE 600V 3A KBP

Taiwan Semiconductor Corporation
2,739 -

RFQ

KBP305G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 600 V 3 A 1.1 V @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP306G C2

KBP306G C2

BRIDGE RECT 1PHASE 800V 3A KBP

Taiwan Semiconductor Corporation
3,779 -

RFQ

KBP306G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 800 V 3 A 1.1 V @ 3 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP306G C2G

KBP306G C2G

BRIDGE RECT 1PHASE 800V 3A KBP

Taiwan Semiconductor Corporation
2,675 -

RFQ

KBP306G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 800 V 3 A 1.1 V @ 3 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP307G C2

KBP307G C2

BRIDGE RECT 1PHASE 1KV 3A KBP

Taiwan Semiconductor Corporation
2,038 -

RFQ

KBP307G C2

Ficha técnica

Tube - Obsolete Single Phase Standard 1 kV 3 A 1.1 V @ 3 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP307G C2G

KBP307G C2G

BRIDGE RECT 1PHASE 1KV 3A KBP

Taiwan Semiconductor Corporation
2,165 -

RFQ

KBP307G C2G

Ficha técnica

Tube - Obsolete Single Phase Standard 1 kV 3 A 1.1 V @ 3 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
CBR1A-020

CBR1A-020

BRIDGE RECT 1P 200V 1.5A A CASE

Central Semiconductor Corp
2,711 -

RFQ

CBR1A-020

Ficha técnica

Box - Obsolete Single Phase Standard 200 V 1.5 A 1 V @ 1 A 10 µA @ 200 V -65°C ~ 150°C (TJ) Through Hole 4-Circular, A Case
CBR1A-040

CBR1A-040

BRIDGE RECT 1P 400V 1.5A A CASE

Central Semiconductor Corp
3,059 -

RFQ

CBR1A-040

Ficha técnica

Box - Obsolete Single Phase Standard 400 V 1.5 A 1 V @ 1 A 10 µA @ 400 V -65°C ~ 150°C (TJ) Through Hole 4-Circular, A Case
CBR1A-060

CBR1A-060

BRIDGE RECT 1P 600V 1.5A A CASE

Central Semiconductor Corp
3,163 -

RFQ

CBR1A-060

Ficha técnica

Box - Obsolete Single Phase Standard 600 V 1.5 A 1 V @ 1 A 10 µA @ 600 V -65°C ~ 150°C (TJ) Through Hole 4-Circular, A Case
CBR1A-080

CBR1A-080

BRIDGE RECT 1P 800V 1.5A A CASE

Central Semiconductor Corp
2,637 -

RFQ

CBR1A-080

Ficha técnica

Box - Obsolete Single Phase Standard 800 V 1.5 A 1 V @ 1 A 10 µA @ 800 V -65°C ~ 150°C (TJ) Through Hole 4-Circular, A Case
CBR1F-010

CBR1F-010

BRIDGE RECT 1P 100V 1.5A A CASE

Central Semiconductor Corp
3,697 -

RFQ

CBR1F-010

Ficha técnica

Box - Obsolete Single Phase Standard 100 V 1.5 A 1.3 V @ 1 A 10 µA @ 100 V -65°C ~ 150°C (TJ) Through Hole 4-Circular, A Case
CBR2-010

CBR2-010

BRIDGE RECT 1P 100V 2A A CASE

Central Semiconductor Corp
2,575 -

RFQ

CBR2-010

Ficha técnica

Box - Obsolete Single Phase Standard 100 V 2 A 1.1 V @ 2 A 10 µA @ 100 V -65°C ~ 150°C (TJ) Through Hole 4-Circular, A Case
CBR2-020

CBR2-020

BRIDGE RECT 1P 200V 2A A CASE

Central Semiconductor Corp
3,785 -

RFQ

CBR2-020

Ficha técnica

Box - Obsolete Single Phase Standard 200 V 2 A 1.1 V @ 2 A 10 µA @ 200 V -65°C ~ 150°C (TJ) Through Hole 4-Circular, A Case
CBR2-040

CBR2-040

BRIDGE RECT 1P 400V 2A A CASE

Central Semiconductor Corp
3,199 -

RFQ

CBR2-040

Ficha técnica

Box - Obsolete Single Phase Standard 400 V 2 A 1.1 V @ 2 A 10 µA @ 400 V -65°C ~ 150°C (TJ) Through Hole 4-Circular, A Case
CBR2-080

CBR2-080

BRIDGE RECT 1P 800V 2A A CASE

Central Semiconductor Corp
2,641 -

RFQ

CBR2-080

Ficha técnica

Box - Obsolete Single Phase Standard 800 V 2 A 1.1 V @ 2 A 10 µA @ 800 V -65°C ~ 150°C (TJ) Through Hole 4-Circular, A Case
CBR2-100

CBR2-100

BRIDGE RECT 1PHASE 1KV 2A A CASE

Central Semiconductor Corp
3,609 -

RFQ

CBR2-100

Ficha técnica

Box - Obsolete Single Phase Standard 1 kV 2 A 1.1 V @ 2 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) Through Hole 4-Circular, A Case
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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