Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
B500C5000A

B500C5000A

1PH BRIDGE 30X20X3.6 1000V 5A

Diotec Semiconductor
3,323 -

RFQ

B500C5000A

Ficha técnica

Box - Active Single Phase Standard 1 kV 4 A 1 V @ 5 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
NTE53000

NTE53000

BRIDGE-200VRM 10A

NTE Electronics, Inc
828 -

RFQ

NTE53000

Ficha técnica

Bag - Active Single Phase Standard 200 V 10 A 1.1 V @ 5 A 10 µA @ 200 V -65°C ~ 125°C (TJ) - -
B500C7000A

B500C7000A

1PH BRIDGE 30X20X3.6 1000V 7A

Diotec Semiconductor
3,086 -

RFQ

B500C7000A

Ficha técnica

Box - Active Single Phase Standard 1 kV 4.8 A 1 V @ 5 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
GBJ2006-BP

GBJ2006-BP

BRIDGE RECT 1PHASE 600V 20A GBJ

Micro Commercial Co
3,461 -

RFQ

GBJ2006-BP

Ficha técnica

Bulk - Active Single Phase Standard 600 V 20 A 1.05 V @ 10 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
NTE5305

NTE5305

R-SI BRG 600V 1.5A

NTE Electronics, Inc
2,047 -

RFQ

NTE5305

Ficha técnica

Bag - Active Single Phase Standard 600 V 1.5 A 1 V @ 1 A 10 µA @ 600 V -55°C ~ 125°C (TJ) Through Hole 4-Circular
NTE169

NTE169

R-SI BRIDGE 600V 2A

NTE Electronics, Inc
3,852 -

RFQ

NTE169

Ficha técnica

Bag - Active Single Phase Standard 600 V 2 A 1.1 V @ 2 A 10 µA @ 600 V -55°C ~ 165°C (TJ) Through Hole 4-SIP
TS15P06G

TS15P06G

BRIDGE RECT 1P 800V 15A TS-6P

Taiwan Semiconductor Corporation
3,118 -

RFQ

TS15P06G

Ficha técnica

Tube - Active Single Phase Standard 800 V 15 A 1.1 V @ 15 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
DBF10TC

DBF10TC

BRIDGE RECTIFIER, 1 PHASE, 1A, 6

onsemi
2,037 -

RFQ

Bulk - Active - - - - - - - - -
NTE53001

NTE53001

BRIDGE-400VRM 10A

NTE Electronics, Inc
685 -

RFQ

NTE53001

Ficha técnica

Bag - Active Single Phase Standard 600 V 8 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - -
TS20P05G

TS20P05G

BRIDGE RECT 1P 600V 20A TS-6P

Taiwan Semiconductor Corporation
2,828 -

RFQ

TS20P05G

Ficha técnica

Tube - Active Single Phase Standard 600 V 20 A 1.1 V @ 20 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS20P06G

TS20P06G

BRIDGE RECT 1P 800V 20A TS-6P

Taiwan Semiconductor Corporation
2,028 -

RFQ

TS20P06G

Ficha técnica

Tube - Active Single Phase Standard 800 V 20 A 1.1 V @ 20 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
GBJ3502-BP

GBJ3502-BP

BRIDGE RECT 1PHASE 200V 35A GBJ

Micro Commercial Co
3,657 -

RFQ

GBJ3502-BP

Ficha técnica

Tube - Active Single Phase Standard 200 V 35 A 1.05 V @ 17.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ3501-BP

GBJ3501-BP

BRIDGE RECT 1PHASE 100V 35A GBJ

Micro Commercial Co
2,200 -

RFQ

GBJ3501-BP

Ficha técnica

Tube - Active Single Phase Standard 100 V 35 A 1.05 V @ 17.5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBUK8G

GBUK8G

1PH BRIDGE GBU 380V 8A

Diotec Semiconductor
2,029 -

RFQ

GBUK8G

Ficha técnica

Box - Active Single Phase Standard 380 V 8 A 900 mV @ 8 A 5 µA @ 380 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBUK8D

GBUK8D

1PH BRIDGE GBU 190V 8A

Diotec Semiconductor
3,547 -

RFQ

GBUK8D

Ficha técnica

Box - Active Single Phase Standard 190 V 8 A 900 mV @ 8 A 5 µA @ 190 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBL406G

KBL406G

BRIDGE RECT 1PHASE 800V 4A KBL

Taiwan Semiconductor Corporation
3,647 -

RFQ

KBL406G

Ficha técnica

Tray - Active Single Phase Standard 800 V 4 A 1.1 V @ 4 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
NTE5306

NTE5306

R-SI BRG 800V 1.5A

NTE Electronics, Inc
556 -

RFQ

NTE5306

Ficha técnica

Bag - Active Single Phase Standard 800 V 1.5 A 1 V @ 1 A 10 µA @ 800 V -55°C ~ 125°C (TJ) Through Hole 4-Circular
NTE53002

NTE53002

BRIDGE-600VRM 10A

NTE Electronics, Inc
3,592 -

RFQ

NTE53002

Ficha técnica

Bag - Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -65°C ~ 125°C (TJ) - -
NTE5304

NTE5304

R-SI BRG 400V 1.5A

NTE Electronics, Inc
3,022 -

RFQ

NTE5304

Ficha técnica

Bag - Active Single Phase Standard 400 V 1.5 A 1 V @ 1 A 10 µA @ 400 V -55°C ~ 125°C (TJ) Through Hole 4-Circular
DBF150G

DBF150G

15 A SILICON DIFFUSED JUNCTION T

Sanyo
2,331 -

RFQ

DBF150G

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3.2 A 1.1 V @ 7.5 A 10 µA @ 600 V 150°C (TJ) Through Hole 4-SIP, DBF
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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