Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBJ410G

KBJ410G

BRIDGE RECT 1PHASE 1KV 4A KBJ

GeneSiC Semiconductor
2,864 -

RFQ

KBJ410G

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
PB68-BP

PB68-BP

BRIDGE RECT 1PHASE 800V 6A PB-6

Micro Commercial Co
2,275 -

RFQ

PB68-BP

Ficha técnica

Bulk - Active Single Phase Standard 800 V 6 A 1.1 V @ 3 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, PB-6
GBJA20005-BP

GBJA20005-BP

DIODE BRIDGE 20A JA

Micro Commercial Co
2,781 -

RFQ

GBJA20005-BP

Ficha técnica

Tube - Active Single Phase Standard 50 V 20 A 1.1 V @ 10 A 10 µA @ 50 V -55°C ~ 150°C Through Hole 4-SIP, JA
GBJA2001-BP

GBJA2001-BP

DIODE BRIDGE 20A JA

Micro Commercial Co
3,081 -

RFQ

GBJA2001-BP

Ficha técnica

Tube - Active Single Phase Standard 100 V 20 A 1.1 V @ 10 A 10 µA @ 100 V -55°C ~ 150°C Through Hole 4-SIP, JA
GBJA2002-BP

GBJA2002-BP

DIODE BRIDGE 20A JA

Micro Commercial Co
3,060 -

RFQ

GBJA2002-BP

Ficha técnica

Tube - Active Single Phase Standard 200 V 20 A 1.1 V @ 10 A 10 µA @ 200 V -55°C ~ 150°C Through Hole 4-SIP, JA
GBJA2004-BP

GBJA2004-BP

DIODE BRIDGE 20A JA

Micro Commercial Co
2,058 -

RFQ

GBJA2004-BP

Ficha técnica

Tube - Active Single Phase Standard 400 V 20 A 1.1 V @ 10 A 10 µA @ 400 V -55°C ~ 150°C Through Hole 4-SIP, JA
GBJA2006-BP

GBJA2006-BP

DIODE BRIDGE 20A JA

Micro Commercial Co
3,109 -

RFQ

GBJA2006-BP

Ficha técnica

Tube - Active Single Phase Standard 600 V 20 A 1.1 V @ 10 A 10 µA @ 600 V -55°C ~ 150°C Through Hole 4-SIP, JA
GBJA2008-BP

GBJA2008-BP

DIODE BRIDGE 20A JA

Micro Commercial Co
3,374 -

RFQ

GBJA2008-BP

Ficha técnica

Tube - Active Single Phase Standard 800 V 20 A 1.1 V @ 10 A 10 µA @ 800 V -55°C ~ 150°C Through Hole 4-SIP, JA
GBJA2010-BP

GBJA2010-BP

DIODE BRIDGE 20A JA

Micro Commercial Co
3,541 -

RFQ

GBJA2010-BP

Ficha técnica

Tube - Active Single Phase Standard 1 kV 20 A 1.1 V @ 10 A 10 µA @ 1000 V -55°C ~ 150°C Through Hole 4-SIP, JA
GBU6A

GBU6A

BRIDGE RECT 1PHASE 50V 6A GBU

GeneSiC Semiconductor
3,584 -

RFQ

GBU6A

Ficha técnica

Bulk - Active Single Phase Standard 50 V 6 A 1.1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6D

GBU6D

BRIDGE RECT 1PHASE 200V 6A GBU

GeneSiC Semiconductor
3,296 -

RFQ

GBU6D

Ficha técnica

Bulk - Active Single Phase Standard 200 V 6 A 1.1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6G

GBU6G

BRIDGE RECT 1PHASE 400V 6A GBU

GeneSiC Semiconductor
3,727 -

RFQ

GBU6G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 6 A 1.1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6K

GBU6K

BRIDGE RECT 1PHASE 800V 6A GBU

GeneSiC Semiconductor
2,746 -

RFQ

GBU6K

Ficha técnica

Bulk - Active Single Phase Standard 800 V 6 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6M

GBU6M

BRIDGE RECT 1PHASE 1KV 6A GBU

GeneSiC Semiconductor
2,552 -

RFQ

GBU6M

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 6 A 1.1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBL401G

KBL401G

BRIDGE RECT 1PHASE 50V 4A KBL

GeneSiC Semiconductor
2,519 -

RFQ

KBL401G

Ficha técnica

Bulk - Active Single Phase Standard 50 V 4 A 1.1 V @ 4 A 5 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL402G

KBL402G

BRIDGE RECT 1PHASE 100V 4A KBL

GeneSiC Semiconductor
2,940 -

RFQ

KBL402G

Ficha técnica

Bulk - Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL404G

KBL404G

BRIDGE RECT 1PHASE 400V 4A KBL

GeneSiC Semiconductor
3,144 -

RFQ

KBL404G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL406G

KBL406G

BRIDGE RECT 1PHASE 600V 4A KBL

GeneSiC Semiconductor
2,901 -

RFQ

KBL406G

Ficha técnica

Bulk - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL408G

KBL408G

BRIDGE RECT 1PHASE 800V 4A KBL

GeneSiC Semiconductor
3,071 -

RFQ

KBL408G

Ficha técnica

Bulk - Active Single Phase Standard 800 V 4 A 1.1 V @ 4 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL410G

KBL410G

BRIDGE RECT 1PHASE 1KV 4A KBL

GeneSiC Semiconductor
2,651 -

RFQ

KBL410G

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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