Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU1506-G

GBU1506-G

BRIDGE RECT 1PHASE 600V 15A GBU

Comchip Technology
2,287 -

RFQ

GBU1506-G

Ficha técnica

Bulk - Active Single Phase Standard 600 V 15 A 1 V @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBJ2510

GBJ2510

BRIDGE RECT 1PHASE 1KV 25A GBJ

SMC Diode Solutions
2,186 -

RFQ

GBJ2510

Ficha técnica

Tube - Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBU802

GBU802

BRIDGE RECT 1PHASE 200V 8A GBU

Diodes Incorporated
2,071 -

RFQ

GBU802

Ficha técnica

Tube - Active Single Phase Standard 200 V 8 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU606

GBU606

BRIDGE RECT 1PHASE 600V 6A GBU

Diodes Incorporated
3,794 -

RFQ

GBU606

Ficha técnica

Tube - Active Single Phase Standard 600 V 6 A 1 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8D

GBU8D

BRIDGE RECT 1PHASE 200V 8A GBU

GeneSiC Semiconductor
2,759 -

RFQ

GBU8D

Ficha técnica

Bulk - Active Single Phase Standard 200 V 8 A 1.1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8J

GBU8J

BRIDGE RECT 1PHASE 600V 8A GBU

GeneSiC Semiconductor
2,414 -

RFQ

GBU8J

Ficha técnica

Bulk - Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8B

GBU8B

BRIDGE RECT 1PHASE 100V 8A GBU

GeneSiC Semiconductor
3,791 -

RFQ

GBU8B

Ficha técnica

Bulk - Active Single Phase Standard 100 V 8 A 1.1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
VS-2KBP02

VS-2KBP02

BRIDGE RECT 1PHASE 200V 2A D-44

Vishay General Semiconductor - Diodes Division
3,714 -

RFQ

VS-2KBP02

Ficha técnica

Bulk VS-2KBP Active Single Phase Standard 200 V 2 A 1 V @ 1 A 10 µA @ 200 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, D-44
KBL04-E4/51

KBL04-E4/51

BRIDGE RECT 1PHASE 400V 4A KBL

Vishay General Semiconductor - Diodes Division
3,195 -

RFQ

KBL04-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL08-E4/51

KBL08-E4/51

BRIDGE RECT 1PHASE 800V 4A KBL

Vishay General Semiconductor - Diodes Division
2,836 -

RFQ

KBL08-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 4 A 1.1 V @ 4 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
GBL08-E3/45

GBL08-E3/45

BRIDGE RECT 1PHASE 800V 3A GBL

Vishay General Semiconductor - Diodes Division
2,592 -

RFQ

GBL08-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3 A 1 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBJ1504-F

GBJ1504-F

BRIDGE RECT 1PHASE 400V 15A GBJ

Diodes Incorporated
129 -

RFQ

GBJ1504-F

Ficha técnica

Tube - Active Single Phase Standard 400 V 15 A 1.05 V @ 7.5 A 10 µA @ 400 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBU3010-BP

GBU3010-BP

30A, BRIDGE, GBU

Micro Commercial Co
2,455 -

RFQ

GBU3010-BP

Ficha técnica

Tube - Active Single Phase Standard 1 kV 30 A 1 V @ 15 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6J

GBU6J

BRIDGE RECT 1PHASE 600V 6A GBU

onsemi
2,499 -

RFQ

GBU6J

Ficha técnica

Tube - Active Single Phase Standard 600 V 6 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBU6M

KBU6M

BRIDGE RECT 1PHASE 1KV 6A KBU

GeneSiC Semiconductor
3,130 -

RFQ

KBU6M

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 6 A 1 V @ 6 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU6B

KBU6B

BRIDGE RECT 1PHASE 100V 6A KBU

GeneSiC Semiconductor
2,154 -

RFQ

KBU6B

Ficha técnica

Bulk - Active Single Phase Standard 100 V 6 A 1 V @ 6 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU8M

KBU8M

BRIDGE RECT 1PHASE 1KV 8A KBU

GeneSiC Semiconductor
3,380 -

RFQ

KBU8M

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 8 A 1 V @ 8 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU8G

KBU8G

BRIDGE RECT 1PHASE 400V 8A KBU

GeneSiC Semiconductor
2,437 -

RFQ

KBU8G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 8 A 1 V @ 8 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
BR62

BR62

BRIDGE RECT 1PHASE 200V 6A BR-6

GeneSiC Semiconductor
2,044 -

RFQ

BR62

Ficha técnica

Bulk - Active Single Phase Standard 200 V 6 A 1 V @ 3 A 10 µA @ 200 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-6
GBJ2510-BP

GBJ2510-BP

BRIDGE RECT 1PHASE 1KV 25A GBJ

Micro Commercial Co
2,911 -

RFQ

GBJ2510-BP

Ficha técnica

Tube - Active Single Phase Standard 1 kV 25 A 1.05 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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