Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU8JL-5302M3/45

GBU8JL-5302M3/45

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,436 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8JL-5700E3/51

GBU8JL-5700E3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,718 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8JL-5700M3/51

GBU8JL-5700M3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,282 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8JL-5701E3/51

GBU8JL-5701E3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,258 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8JL-5701M3/51

GBU8JL-5701M3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,441 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8JL-6088E3/51

GBU8JL-6088E3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,433 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8JL-6088M3/51

GBU8JL-6088M3/51

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,842 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8JL-7000E3/45

GBU8JL-7000E3/45

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,909 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8JL-7000M3/45

GBU8JL-7000M3/45

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,021 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8JL-7014E3/45

GBU8JL-7014E3/45

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,379 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8JL-7014M3/45

GBU8JL-7014M3/45

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,833 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-3E3/51

GBU8K-3E3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,025 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-3M3/51

GBU8K-3M3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,629 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-4E3/51

GBU8K-4E3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,067 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-4M3/51

GBU8K-4M3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,449 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-5400M3/51

GBU8K-5400M3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,044 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-5410E3/51

GBU8K-5410E3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,875 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-5410M3/51

GBU8K-5410M3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,240 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-5E3/51

GBU8K-5E3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,578 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-5M3/51

GBU8K-5M3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,167 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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