Transistores - JFET

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Voltage-Breakdown(V(BR)GSS) DraintoSourceVoltage(Vdss) Current-Drain(Idss)@Vds(Vgs=0) CurrentDrain(Id)-Max Voltage-Cutoff(VGSoff)@Id InputCapacitance(Ciss)(Max)@Vds Resistance-RDS(On) Power-Max OperatingTemperature MountingType
2N3955A

2N3955A

SMALL SIGNAL BIPOLAR TRANSISTOR

Harris Corporation
162 -

RFQ

2N3955A

Ficha técnica

Bulk - Active 2 N-Channel 50 V - - - - - - - - Through Hole
3N206

3N206

N-CHANNEL POWER MOSFET

Harris Corporation
612 -

RFQ

3N206

Ficha técnica

Bulk - Active 2 N-Channel (Dual) 30 V 25 V 3 mA @ 15 V - 500 mV @ 20 µA 0.03pF @ 15V 17 mOhms 360 mW -65°C ~ 175°C (TA) Through Hole
2N5362

2N5362

N - CHANNEL JFET

Harris Corporation
2,772 -

RFQ

2N5362

Ficha técnica

Bulk - Active N-Channel 40 V 40 V 4 mA @ 15 V - 2 V @ 100 nA 6pF @ 15V - 300 mW - Through Hole
3N187

3N187

N-CHANNEL POWER MOSFET

Harris Corporation
2,322 -

RFQ

3N187

Ficha técnica

Bulk - Active N-Channel 6.5 V 20 V 5 mA @ 15 V - 500 mV @ 50 µA 8.5pF @ 15V - 330 mW -65°C ~ 175°C (TJ) Through Hole
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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