Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RJP60D0DPK-01#T0

RJP60D0DPK-01#T0

RJH60D0 - INSULATED GATE BIPOLAR

Renesas
3,565 -

RFQ

Bulk - Obsolete - 600 V 45 A 90 A 2.2V @ 15V, 22A 140 W - Standard 45 nC 35ns/90ns 300V, 22A, 5Ohm, 15V - 150°C (TJ) Through Hole
RJH1BF7RDPQ-80#T2

RJH1BF7RDPQ-80#T2

RJH1BF7 - INSULATED GATE BIPOLAR

Renesas
2,522 -

RFQ

Bulk - Obsolete - 1100 V 60 A 100 A 2.35V @ 15V, 60A 250 W - Standard - - - - 150°C (TJ) Through Hole
RJH60D1DPP-E0#T2

RJH60D1DPP-E0#T2

RJH60D1 - INSULATED GATE BIPOLAR

Renesas
3,101 -

RFQ

Bulk - Obsolete Trench 600 V 20 A - 2.5V @ 15V, 10A 30 W 100µJ (on), 130µJ (off) Standard 13 nC 30ns/42ns 300V, 10A, 5Ohm, 15V 70 ns 150°C (TJ) Through Hole
RJH1DF7RDPQ-80#T2

RJH1DF7RDPQ-80#T2

RJH1DF7 - INSULATED GATE BIPOLAR

Renesas
400 -

RFQ

Bulk - Obsolete - 1350 V 60 A - 2.55V @ 15V, 35A 250 W - Standard - 58ns/144ns 600V, 35A, 5Ohm, 15V - 150°C (TJ) Through Hole
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario