Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IV1Q12050T3

IV1Q12050T3

SIC MOSFET, 1200V 50MOHM, TO-247

Inventchip
3,877 -

RFQ

IV1Q12050T3

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 58A (Tc) 20V 65mOhm @ 20A, 20V 3.2V @ 6mA 120 nC @ 20 V +20V, -5V 2770 pF @ 800 V - 327W (Tc) -55°C ~ 175°C (TJ) Through Hole
IV1Q12160T4

IV1Q12160T4

SIC MOSFET, 1200V 160MOHM, TO-24

Inventchip
111 -

RFQ

IV1Q12160T4

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 20V 195mOhm @ 10A, 20V 2.9V @ 1.9mA 43 nC @ 20 V +20V, -5V 885 pF @ 800 V - 138W (Tc) -55°C ~ 175°C (TJ) Through Hole
IV1Q12050T4

IV1Q12050T4

SIC MOSFET, 1200V 50MOHM, TO-247

Inventchip
2,484 -

RFQ

IV1Q12050T4

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 58A (Tc) 20V 65mOhm @ 20A, 20V 3.2V @ 6mA 120 nC @ 20 V +20V, -5V 2750 pF @ 800 V - 344W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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