Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
VS-FC420SA15

VS-FC420SA15

MOSFET N-CH 150V 400A SOT227

Vishay General Semiconductor - Diodes Division
3,367 -

RFQ

VS-FC420SA15

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 400A (Tc) 10V 2.75mOhm @ 200A, 10V 5.4V @ 1mA 250 nC @ 10 V ±20V 13700 pF @ 25 V - 909W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
VS-FC420SA10

VS-FC420SA10

MOSFET N-CH 100V 435A SOT227

Vishay General Semiconductor - Diodes Division
2,106 -

RFQ

VS-FC420SA10

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 435A (Tc) 10V 2.15mOhm @ 200A, 10V 3.8V @ 750µA 375 nC @ 10 V ±20V 17300 pF @ 25 V - 652W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
VS-FC270SA20

VS-FC270SA20

MOSFET N-CH 200V 287A SOT227

Vishay General Semiconductor - Diodes Division
2,710 -

RFQ

VS-FC270SA20

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 287A (Tc) 10V 4.7mOhm @ 200A, 10V 4.3V @ 1mA 250 nC @ 10 V ±20V 16500 pF @ 100 V - 937W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
VS-FB190SA10

VS-FB190SA10

MOSFET N-CH 100V 190A SOT227

Vishay General Semiconductor - Diodes Division
3,500 -

RFQ

VS-FB190SA10

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 190A (Tj) 10V 6.5mOhm @ 180A, 10V 4.35V @ 250µA 250 nC @ 10 V ±20V 10700 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
VS-FA38SA50LCP

VS-FA38SA50LCP

MOSFET N-CH 500V 38A SOT-227

Vishay General Semiconductor - Diodes Division
2,464 -

RFQ

VS-FA38SA50LCP

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 38A (Tc) 10V 130mOhm @ 23A, 10V 4V @ 250µA 420 nC @ 10 V ±20V 6900 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
VS-FA72SA50LC

VS-FA72SA50LC

MOSFET N-CH 500V 72A SOT-227

Vishay General Semiconductor - Diodes Division
2,913 -

RFQ

VS-FA72SA50LC

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 72A (Tc) 10V 80mOhm @ 34A, 10V 4V @ 250µA 338 nC @ 10 V ±20V 10000 pF @ 25 V - 1136W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
VS-FB180SA10P

VS-FB180SA10P

MOSFET N-CH 100V 180A SOT-227

Vishay General Semiconductor - Diodes Division
3,175 -

RFQ

VS-FB180SA10P

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.5mOhm @ 180A, 10V 4V @ 250µA 380 nC @ 10 V ±20V 10700 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
VS-FC220SA20

VS-FC220SA20

MOSFET N-CH 200V 220A SOT-227

Vishay General Semiconductor - Diodes Division
3,136 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 7mOhm @ 150A, 10V 5.1V @ 500µA 350 nC @ 10 V ±30V 21000 pF @ 50 V - 789W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
VS-FC80NA20

VS-FC80NA20

MOSFET N-CH 200V 108A SOT227

Vishay General Semiconductor - Diodes Division
3,985 -

RFQ

VS-FC80NA20

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 108A (Tc) 10V 14mOhm @ 80A, 10V 5.5V @ 250µA 161 nC @ 10 V ±30V 10720 pF @ 50 V - 405W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
VS-FA40SA50LC

VS-FA40SA50LC

MOSFET N-CH 500V 40A SOT-227

Vishay General Semiconductor - Diodes Division
2,800 -

RFQ

VS-FA40SA50LC

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 130mOhm @ 23A, 10V 4V @ 250µA 420 nC @ 10 V ±20V 6900 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
FB180SA10

FB180SA10

MOSFET N-CH 100V 180A SOT-227

Vishay General Semiconductor - Diodes Division
2,350 -

RFQ

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.5mOhm @ 108A, 10V 4V @ 250µA 380 nC @ 10 V ±20V 10700 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
FA38SA50LC

FA38SA50LC

MOSFET N-CH 500V 38A SOT-227

Vishay General Semiconductor - Diodes Division
3,815 -

RFQ

FA38SA50LC

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 38A (Tc) 10V 130mOhm @ 23A, 10V 4V @ 250µA 420 nC @ 10 V ±20V 6900 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
FA57SA50LC

FA57SA50LC

MOSFET N-CH 500V 57A SOT-227

Vishay General Semiconductor - Diodes Division
2,509 -

RFQ

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 57A (Tc) 10V 80mOhm @ 34A, 10V 4V @ 250µA 338 nC @ 10 V ±20V 10000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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