Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
QJD1210010

QJD1210010

MOSFET 2N-CH 1200V 100A SIC

Powerex Inc.
2,724 -

RFQ

QJD1210010

Ficha técnica

Bulk - Active 2 N-Channel (Dual) Silicon Carbide (SiC) 1200V (1.2kV) 100A (Tc) 25mOhm @ 100A, 20V 5V @ 10mA 500nC @ 20V 10200pF @ 800V 1080W -40°C ~ 175°C (TJ) Chassis Mount
QJD1210011

QJD1210011

MOSFET 2N-CH 1200V 100A SIC

Powerex Inc.
2,899 -

RFQ

QJD1210011

Ficha técnica

Bulk - Active 2 N-Channel (Dual) Silicon Carbide (SiC) 1200V (1.2kV) 100A (Tc) 25mOhm @ 100A, 20V 5V @ 10mA 500nC @ 20V 10200pF @ 800V 900W -40°C ~ 175°C (TJ) Chassis Mount
QJD1210SA1

QJD1210SA1

MOSFET 2N-CH 1200V 100A SIC

Powerex Inc.
2,323 -

RFQ

QJD1210SA1

Ficha técnica

Bulk - Obsolete 2 N-Channel (Dual) Standard 1200V (1.2kV) 100A 17mOhm @ 100A, 15V 1.6V @ 34mA 330nC @ 15V 8200pF @ 10V 520W -40°C ~ 150°C (TJ) Chassis Mount
QJD1210SA2

QJD1210SA2

MOSFET 2N-CH 1200V 100A SIC

Powerex Inc.
2,919 -

RFQ

QJD1210SA2

Ficha técnica

Bulk - Obsolete 2 N-Channel (Dual) Standard 1200V (1.2kV) 100A 17mOhm @ 100A, 15V 1.6V @ 34mA 330nC @ 15V 8200pF @ 10V 415W -40°C ~ 150°C (TJ) Chassis Mount
QJD1210SB1

QJD1210SB1

MOD MOSFET 1200V 10A DUAL SIC

Powerex Inc.
3,625 -

RFQ

Bulk * Active - - - - - - - - - - -
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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