| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  | APTM20AM04FGMOSFET 2N-CH 200V 372A SP6Microchip Technology | 2,421 | - | RFQ |   Ficha técnica | Bulk | - | Active | 2 N-Channel (Half Bridge) | Standard | 200V | 372A | 5mOhm @ 186A, 10V | 5V @ 10mA | 560nC @ 10V | 28900pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | 
|   | MIC4424CWMTRDUAL 3A-PEAK LOW-SIDE MOSFET DRIMicrochip Technology | 2,714 | - | RFQ |   Ficha técnica | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | 
|   | TC2320TG-GMOSFET N/P-CH 200V 8SOICMicrochip Technology | 3,269 | - | RFQ |   Ficha técnica | Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel | Standard | 200V | - | 7Ohm @ 1A, 10V | 2V @ 1mA | - | 110pF @ 25V | - | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | MSCSM120AM08CT3AGPM-MOSFET-SIC-SBD~-SP3FMicrochip Technology | 2,459 | - | RFQ |   Ficha técnica | Tube | - | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 7.8mOhm @ 160A, 20V | 2.8V @ 4mA | 928nC @ 20V | 12.08pF @ 1000V | 1.409kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | 
|   | APTM50HM65FT3GMOSFET 4N-CH 500V 51A SP3Microchip Technology | 3,116 | - | RFQ |   Ficha técnica | Bulk | - | Active | 4 N-Channel (Half Bridge) | Standard | 500V | 51A | 78mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | 
|   | APTM50AM38STGMOSFET 2N-CH 500V 90A SP4Microchip Technology | 3,074 | - | RFQ |   Ficha técnica | Bulk | - | Active | 2 N-Channel (Half Bridge) | Standard | 500V | 90A | 45mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | 
|   | MSCM20XM10T3XGPM-MOSFET-OTHER-SP3XMicrochip Technology | 3,092 | - | RFQ |   Ficha técnica | Bulk | - | Active | 6 N-Channel (3-Phase Bridge) | Standard | 200V | 108A (Tc) | 9.7mOhm @ 81A, 10V | 5V @ 250µA | 161nC @ 10V | 10700pF @ 50V | 341W (Tc) | -40°C ~ 125°C (Tc) | Chassis Mount | 
|   | MSCSM70AM10CT3AGPM-MOSFET-SIC-SBD~-SP3FMicrochip Technology | 3,074 | - | RFQ |   Ficha técnica | Tube | - | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | 
| .jpg)  | MSCSM120HM31CT3AGPM-MOSFET-SIC-SBD~-SP3FMicrochip Technology | 2,164 | - | RFQ |   Ficha técnica | Tube | - | Active | 4 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | 
|   | MSCSM120TAM31CT3AGPM-MOSFET-SIC-SBD~-SP3FMicrochip Technology | 2,236 | - | RFQ |   Ficha técnica | Tube | - | Active | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | 
|   | MSCSM120AM042CT6LIAGPM-MOSFET-SIC-SBD~-SP6C LIMicrochip Technology | 2,111 | - | RFQ |   Ficha técnica | Tube | - | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18100pF @ 1kV | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | 
|   | MSCSM120AM042CD3AGPM-MOSFET-SIC-SBD~-D3Microchip Technology | 2,193 | - | RFQ |   Ficha técnica | Box | - | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18.1pF @ 1000V | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | 
|   | MSCSM120TAM11CTPAGPM-MOSFET-SIC-SBD~-SP6PMicrochip Technology | 2,935 | - | RFQ |   Ficha técnica | Tube | - | Active | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 251A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9060pF @ 1000V | 1.042kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | 
|   | MSCSM120AM03CT6LIAGPM-MOSFET-SIC-SBD~-SP6C LIMicrochip Technology | 2,180 | - | RFQ |   Ficha técnica | Tube | - | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 805A (Tc) | 3.1mOhm @ 400A, 20V | 2.8V @ 10mA | 2320nC @ 20V | 30200pF @ 1kV | 3.215kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | 
|   | APTC60DSKM24T3GMOSFET 2N-CH 600V 95A SP3Microchip Technology | 2,876 | - | RFQ |   Ficha técnica | Tray | CoolMOS™ | Active | 2 N Channel (Dual Buck Chopper) | Super Junction | 600V | 95A | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | 462W | -40°C ~ 150°C (TJ) | Chassis Mount | 
|   | MSCM20AM058GPM-MOSFET-FREDFET-5-LP8Microchip Technology | 2,959 | - | RFQ |   Ficha técnica | Box | - | Active | 2 N Channel (Phase Leg) | Standard | 200V | 280A (Tc) | - | - | - | - | - | - | Chassis Mount | 
|   | MIC94051BM4TR4-TERMINAL SYMFET P CHANNEL MOSFMicrochip Technology | 2,179 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|   | MIC4426CMTRDUAL 1.5A-PEAK LOW-SIDE MOSFET DMicrochip Technology | 3,016 | - | RFQ |   Ficha técnica | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | 
|   | MIC5018BM4TRHIGH-SIDE MOSFET DRIVERMicrochip Technology | 3,856 | - | RFQ |   Ficha técnica | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | 
|   | MIC5015BMTRLOW-COST HIGH OR LOW-SIDE MOSFETMicrochip Technology | 3,131 | - | RFQ |   Ficha técnica | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |