Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
APTM20AM04FG

APTM20AM04FG

MOSFET 2N-CH 200V 372A SP6

Microchip Technology
2,421 -

RFQ

APTM20AM04FG

Ficha técnica

Bulk - Active 2 N-Channel (Half Bridge) Standard 200V 372A 5mOhm @ 186A, 10V 5V @ 10mA 560nC @ 10V 28900pF @ 25V 1250W -40°C ~ 150°C (TJ) Chassis Mount
MIC4424CWMTR

MIC4424CWMTR

DUAL 3A-PEAK LOW-SIDE MOSFET DRI

Microchip Technology
2,714 -

RFQ

MIC4424CWMTR

Ficha técnica

Bulk * Active - - - - - - - - - - -
TC2320TG-G

TC2320TG-G

MOSFET N/P-CH 200V 8SOIC

Microchip Technology
3,269 -

RFQ

TC2320TG-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N and P-Channel Standard 200V - 7Ohm @ 1A, 10V 2V @ 1mA - 110pF @ 25V - -55°C ~ 150°C (TJ) Surface Mount
MSCSM120AM08CT3AG

MSCSM120AM08CT3AG

PM-MOSFET-SIC-SBD~-SP3F

Microchip Technology
2,459 -

RFQ

MSCSM120AM08CT3AG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 160A, 20V 2.8V @ 4mA 928nC @ 20V 12.08pF @ 1000V 1.409kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
APTM50HM65FT3G

APTM50HM65FT3G

MOSFET 4N-CH 500V 51A SP3

Microchip Technology
3,116 -

RFQ

APTM50HM65FT3G

Ficha técnica

Bulk - Active 4 N-Channel (Half Bridge) Standard 500V 51A 78mOhm @ 25.5A, 10V 5V @ 2.5mA 140nC @ 10V 7000pF @ 25V 390W -40°C ~ 150°C (TJ) Chassis Mount
APTM50AM38STG

APTM50AM38STG

MOSFET 2N-CH 500V 90A SP4

Microchip Technology
3,074 -

RFQ

APTM50AM38STG

Ficha técnica

Bulk - Active 2 N-Channel (Half Bridge) Standard 500V 90A 45mOhm @ 45A, 10V 5V @ 5mA 246nC @ 10V 11200pF @ 25V 694W -40°C ~ 150°C (TJ) Chassis Mount
MSCM20XM10T3XG

MSCM20XM10T3XG

PM-MOSFET-OTHER-SP3X

Microchip Technology
3,092 -

RFQ

MSCM20XM10T3XG

Ficha técnica

Bulk - Active 6 N-Channel (3-Phase Bridge) Standard 200V 108A (Tc) 9.7mOhm @ 81A, 10V 5V @ 250µA 161nC @ 10V 10700pF @ 50V 341W (Tc) -40°C ~ 125°C (Tc) Chassis Mount
MSCSM70AM10CT3AG

MSCSM70AM10CT3AG

PM-MOSFET-SIC-SBD~-SP3F

Microchip Technology
3,074 -

RFQ

MSCSM70AM10CT3AG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120HM31CT3AG

MSCSM120HM31CT3AG

PM-MOSFET-SIC-SBD~-SP3F

Microchip Technology
2,164 -

RFQ

MSCSM120HM31CT3AG

Ficha técnica

Tube - Active 4 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120TAM31CT3AG

MSCSM120TAM31CT3AG

PM-MOSFET-SIC-SBD~-SP3F

Microchip Technology
2,236 -

RFQ

MSCSM120TAM31CT3AG

Ficha técnica

Tube - Active 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120AM042CT6LIAG

MSCSM120AM042CT6LIAG

PM-MOSFET-SIC-SBD~-SP6C LI

Microchip Technology
2,111 -

RFQ

MSCSM120AM042CT6LIAG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18100pF @ 1kV 2.031kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120AM042CD3AG

MSCSM120AM042CD3AG

PM-MOSFET-SIC-SBD~-D3

Microchip Technology
2,193 -

RFQ

MSCSM120AM042CD3AG

Ficha técnica

Box - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18.1pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120TAM11CTPAG

MSCSM120TAM11CTPAG

PM-MOSFET-SIC-SBD~-SP6P

Microchip Technology
2,935 -

RFQ

MSCSM120TAM11CTPAG

Ficha técnica

Tube - Active 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9060pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120AM03CT6LIAG

MSCSM120AM03CT6LIAG

PM-MOSFET-SIC-SBD~-SP6C LI

Microchip Technology
2,180 -

RFQ

MSCSM120AM03CT6LIAG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 805A (Tc) 3.1mOhm @ 400A, 20V 2.8V @ 10mA 2320nC @ 20V 30200pF @ 1kV 3.215kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
APTC60DSKM24T3G

APTC60DSKM24T3G

MOSFET 2N-CH 600V 95A SP3

Microchip Technology
2,876 -

RFQ

APTC60DSKM24T3G

Ficha técnica

Tray CoolMOS™ Active 2 N Channel (Dual Buck Chopper) Super Junction 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) Chassis Mount
MSCM20AM058G

MSCM20AM058G

PM-MOSFET-FREDFET-5-LP8

Microchip Technology
2,959 -

RFQ

MSCM20AM058G

Ficha técnica

Box - Active 2 N Channel (Phase Leg) Standard 200V 280A (Tc) - - - - - - Chassis Mount
MIC94051BM4TR

MIC94051BM4TR

4-TERMINAL SYMFET P CHANNEL MOSF

Microchip Technology
2,179 -

RFQ

Bulk * Active - - - - - - - - - - -
MIC4426CMTR

MIC4426CMTR

DUAL 1.5A-PEAK LOW-SIDE MOSFET D

Microchip Technology
3,016 -

RFQ

MIC4426CMTR

Ficha técnica

Bulk * Active - - - - - - - - - - -
MIC5018BM4TR

MIC5018BM4TR

HIGH-SIDE MOSFET DRIVER

Microchip Technology
3,856 -

RFQ

MIC5018BM4TR

Ficha técnica

Bulk * Active - - - - - - - - - - -
MIC5015BMTR

MIC5015BMTR

LOW-COST HIGH OR LOW-SIDE MOSFET

Microchip Technology
3,131 -

RFQ

MIC5015BMTR

Ficha técnica

Bulk * Active - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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