Transistores - Bipolares (BJT) - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SA812B-T1B-AT

2SA812B-T1B-AT

2SA812B-T1B-AT - PNP SILICON EPI

Renesas
3,142 -

RFQ

Bulk - Obsolete PNP 100 mA 50 V 300mV @ 10mA, 100mA 100nA (ICBO) 90 @ 1mA, 6V 200 mW 180MHz 150°C (TJ) Surface Mount
2SA1836-T1-A

2SA1836-T1-A

2SA1836-T1-A - PNP SILICON EPITA

Renesas
2,183 -

RFQ

Bulk - Obsolete PNP 100 mA 50 V 300mV @ 10mA, 100mA 100nA (ICBO) 90 @ 1mA, 6V 200 mW 180MHz 150°C (TJ) Surface Mount
2SA952-T-A

2SA952-T-A

2SA952 - SMALL SIGNAL BIPOLAR TR

Renesas
2,258 -

RFQ

2SA952-T-A

Ficha técnica

Bulk * Active - - - - - - - - - -
2SC3380ASTR-E

2SC3380ASTR-E

2SC3380ASTR - SILICON NPN TRIPLE

Renesas
2,449 -

RFQ

Bulk - Obsolete NPN 100 mA 300 V 1.5V @ 2mA, 20mA 1µA 30 @ 20mA, 20V 1 W 80MHz 150°C (TJ) Surface Mount
2SC4942-T1-AZ

2SC4942-T1-AZ

2SC4942-T1-AZ - NPN SILICON TRIP

Renesas
2,232 -

RFQ

Bulk - Obsolete NPN 1 A 600 V 1V @ 80mA, 400mA 10µA (ICBO) 30 @ 100mA, 5V 2 W 30MHz 150°C (TJ) Surface Mount
2SA1871-T1-AZ

2SA1871-T1-AZ

2SA1871-T1-AZ - PNP SILICON TRIP

Renesas
2,594 -

RFQ

Bulk - Obsolete PNP 1 A 600 V 1V @ 60mA, 300mA 10µA (ICBO) 30 @ 100mA, 5V 2 W 30MHz 150°C (TJ) Surface Mount
2SB1261(1)-AZ

2SB1261(1)-AZ

2SB1261 - PNP SILICON EPITAXIAL

Renesas
2,244 -

RFQ

Bulk - Obsolete PNP 3 A 60 V 300mV @ 150mA, 1.5A 10µA (ICBO) 100 @ 600mA, 2V 2 W 50MHz 150°C (TJ) Surface Mount
2SC4942-AZ

2SC4942-AZ

2SC4942-AZ - NPN SILICON TRIPLE

Renesas
2,253 -

RFQ

Bulk - Obsolete NPN 1 A 600 V 1V @ 80mA, 400mA 10µA (ICBO) 30 @ 100mA, 5V 2 W 30MHz 150°C (TJ) Surface Mount
2SD1579-T-AZ

2SD1579-T-AZ

2SD1579-T-AZ - SMALL SIGNAL BIPO

Renesas
3,202 -

RFQ

Bulk - Obsolete NPN - Darlington 1.5 A 80 V 1.5V @ 1mA, 1A 1mA 2000 @ 1A, 2V 1 W 60MHz 150°C (TJ) Through Hole
2SB601-AZ

2SB601-AZ

2SB601 - PNP SILICON EPITAXIAL T

Renesas
3,506 -

RFQ

Bulk - Obsolete PNP - Darlington 5 A 100 V 1.5V @ 3mA, 3A 10µA 2000 @ 3A, 2V 1.5 W - 150°C (TJ) Through Hole
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario