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PMIC - Controladores de Puerta

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	DrivenConfiguration	ChannelType	NumberofDrivers	GateType	Voltage-Supply	LogicVoltage-VILVIH	Current-PeakOutput(SourceSink)	InputType	HighSideVoltage-Max(Bootstrap)	Rise/FallTime(Typ)	OperatingTemperature	MountingType
BD2270HFV-TR IC GATE DRVR HIGH-SIDE HVSOF5 Rohm Semiconductor	3,756	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	High-Side	Single	1	N-Channel MOSFET	2.7V ~ 5.5V	-	-	Non-Inverting	-	130µs, 18µs	-25°C ~ 85°C (TA)	Surface Mount
BD16950EFV-CE2 IC GATE DRVR HALF-BRIDG 24HTSSOP Rohm Semiconductor	2,127	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q100	Active	Half-Bridge	Independent	2	N-Channel MOSFET	3V ~ 5.5V	-	-	Non-Inverting	-	-	-40°C ~ 150°C (TJ)	Surface Mount
BD2270HFV-LBTR IC GATE DRVR HIGH-SIDE HVSOF5 Rohm Semiconductor	2,258	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	High-Side	Single	1	N-Channel MOSFET	2.7V ~ 5.5V	-	-	Non-Inverting	-	130µs, 18µs	-25°C ~ 85°C (TA)	Surface Mount
BS2101F-E2 IC GATE DRV HI-SIDE/LO-SIDE 8SOP Rohm Semiconductor	145	-	RFQ	Ficha técnica	Cut Tape (CT)	-	Not For New Designs	High-Side or Low-Side	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 18V	1V, 2.6V	60mA, 130mA	Non-Inverting	600 V	60ns, 20ns	-40°C ~ 125°C (TA)	Surface Mount
BS2132F-E2 600V HIGH VOLTAGE 3 PHASE BRIDGE Rohm Semiconductor	121	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	High-Side	3-Phase	3	IGBT, N-Channel MOSFET	11.5V ~ 20V	0.8V, 2.6V	-	Non-Inverting	600 V	125ns, 50ns	-40°C ~ 125°C (TA)	Surface Mount
BM60212FV-CE2 IC GATE DRVR HI/LOW SIDE 20SSOP Rohm Semiconductor	2,108	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q100	Active	High-Side and Low-Side	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 24V	0.8V, 2V	4.5A, 3.9A	Non-Inverting	1200 V	50ns, 50ns	-40°C ~ 125°C (TA)	Surface Mount
BM60213FV-CE2 IC GATE DRVR HI/LOW SIDE 20SSOP Rohm Semiconductor	2,915	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q100	Active	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 24V	0.8V, 2V	4.5A, 3.9A	Non-Inverting	1200 V	50ns, 50ns	-40°C ~ 125°C	Surface Mount
BD2320EFJ-LAE2 100 V VB 3.5 A/4.5 A PEAK CURREN Rohm Semiconductor	2,997	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	High-Side and Low-Side	Independent	2	N-Channel MOSFET	7.5V ~ 14.5V	1.7V, 1.5V	3.5A, 4.5A	Non-Inverting	100 V	8ns, 6ns	-40°C ~ 125°C (TA)	Surface Mount
BD2310G-TR 1CH 4A HIGH SPEED LOW-SIDE GATE Rohm Semiconductor	2,374	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	Low-Side	Single	1	IGBT, N-Channel MOSFET	4.5V ~ 18V	-	4A, 4A	Non-Inverting	-	10ns, 10ns	-40°C ~ 125°C	Surface Mount
BS2100F-E2 IC DVR IGBT/MOSFET Rohm Semiconductor	186	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
BM6103FV-CE2 IC GATE DRVR LOW-SIDE 20SSOP Rohm Semiconductor	3,378	-	RFQ	Ficha técnica	Bulk	-	Active	Low-Side	-	1	IGBT, N-Channel, P-Channel MOSFET	4.5 ~ 5.5V	-	-	Inverting, Non-Inverting	-	50ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
BD6562FV-LBE2 IC GATE DRVR LOW-SIDE 16SSOP Rohm Semiconductor	3,146	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	10V ~ 25V	-	600mA, 600mA	Non-Inverting	-	-	-25°C ~ 150°C (TJ)	Surface Mount
BD6563FV-LBE2 IC GATE DRVR LOW-SIDE 16SSOP Rohm Semiconductor	3,274	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	Low-Side	Independent	3	IGBT, N-Channel, P-Channel MOSFET	10V ~ 25V	-	600mA, 600mA	Non-Inverting	-	-	-25°C ~ 150°C (TJ)	Surface Mount
BS2103F-E2 IC GATE DRVR HALF-BRIDGE 8SOP Rohm Semiconductor	3,858	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 18V	1V, 2.6V	60mA, 130mA	Non-Inverting	600 V	200ns, 100ns	-40°C ~ 150°C (TJ)	Surface Mount
BS2114F-E2 600V HIGH VOLTAGE HIGH & LOW-SID Rohm Semiconductor	3,649	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.6V	-	Inverting	600 V	30ns, 30ns	-40°C ~ 125°C (TA)	Surface Mount