Optoaisladores - Salida de transistor, fotovoltaica

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
TLP109(TPR,E)

TLP109(TPR,E)

OPTOISO 3.75KV TRANS 6-SO 5 LEAD

Toshiba Semiconductor and Storage
2,922 -

RFQ

TLP109(TPR,E)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 3750Vrms 20% @ 16mA - 800ns, 800ns (Max) - DC Transistor 20V 8mA 1.64V 20 mA - -55°C ~ 125°C Surface Mount
TLX9291A(GBTPL,F

TLX9291A(GBTPL,F

TR COUPLER; SO4; AECQ; ROHS; T&R

Toshiba Semiconductor and Storage
2,654 -

RFQ

TLX9291A(GBTPL,F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active 1 3750Vrms 100% @ 5mA 600% @ 5mA 5µs, 5µs 3µs, 5µs DC Transistor 80V 50mA 1.27V 30 mA 400mV -40°C ~ 125°C Surface Mount
TLX9185A(GBTPL,F

TLX9185A(GBTPL,F

TR COUPLER; 4-PIN SO6; AECQ; ROH

Toshiba Semiconductor and Storage
3,264 -

RFQ

TLX9185A(GBTPL,F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active 1 3750Vrms 100% @ 5mA 600% @ 5mA 5µs, 5µs 3µs, 5µs DC Transistor 80V 50mA 1.27V 30 mA 400mV -40°C ~ 125°C Surface Mount
TLX9000(TPL,F

TLX9000(TPL,F

TR COUPLER; SO4; AECQ; ROHS; T&R

Toshiba Semiconductor and Storage
3,966 -

RFQ

TLX9000(TPL,F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active 1 3750Vrms 100% @ 5mA 900% @ 5mA 15µs, 50µs - DC Transistor 40V 50mA 1.25V 30 mA 400mV -40°C ~ 125°C Surface Mount
TLX9906(TPL,F

TLX9906(TPL,F

PV COUPLER; 4-PIN SO6; AECQ; ROH

Toshiba Semiconductor and Storage
3,873 -

RFQ

TLX9906(TPL,F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active 1 3750Vrms - - 200µs, 200µs - DC Photovoltaic 7V - 1.65V 30 mA - -40°C ~ 125°C Surface Mount
TLP591B(C,F)

TLP591B(C,F)

OPTOISOLATOR 2.5KV PHVOLT 6-DIP

Toshiba Semiconductor and Storage
2,367 -

RFQ

TLP591B(C,F)

Ficha técnica

Tube - Active 1 2500Vrms - - 200µs, 3ms - DC Photovoltaic 7V 24µA 1.4V 50 mA - -55°C ~ 125°C Through Hole
TLP785(GR-TP6,F)

TLP785(GR-TP6,F)

OPTOISOLATR 5KV TRANSISTOR 4-SMD

Toshiba Semiconductor and Storage
3,294 -

RFQ

TLP785(GR-TP6,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 5000Vrms 100% @ 5mA 300% @ 5mA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.15V 60 mA 400mV -55°C ~ 110°C Surface Mount
TLP785(GRH-TP6,F)

TLP785(GRH-TP6,F)

OPTOISOLATR 5KV TRANSISTOR 4-SMD

Toshiba Semiconductor and Storage
2,942 -

RFQ

TLP785(GRH-TP6,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 5000Vrms 150% @ 5mA 300% @ 5mA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.15V 60 mA 400mV -55°C ~ 110°C Surface Mount
TLP785(GB,F)

TLP785(GB,F)

OPTOISOLATR 5KV TRANSISTOR 4-DIP

Toshiba Semiconductor and Storage
3,957 -

RFQ

TLP785(GB,F)

Ficha técnica

Tube - Active 1 5000Vrms 100% @ 5mA 600% @ 5mA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.15V 60 mA 400mV -55°C ~ 110°C Through Hole
TLP785(GR,F)

TLP785(GR,F)

OPTOISOLATR 5KV TRANSISTOR 4-DIP

Toshiba Semiconductor and Storage
2,643 -

RFQ

TLP785(GR,F)

Ficha técnica

Tube - Active 1 5000Vrms 100% @ 5mA 300% @ 5mA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.15V 60 mA 400mV -55°C ~ 110°C Through Hole
TLP785(BL,F)

TLP785(BL,F)

OPTOISOLATR 5KV TRANSISTOR 4-DIP

Toshiba Semiconductor and Storage
2,667 -

RFQ

TLP785(BL,F)

Ficha técnica

Tube - Active 1 5000Vrms 200% @ 5mA 600% @ 5mA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.15V 60 mA 400mV -55°C ~ 110°C Through Hole
TLP2703(TP,E

TLP2703(TP,E

OPTOISO 5KV DARLINGTON SO6L

Toshiba Semiconductor and Storage
3,018 -

RFQ

TLP2703(TP,E

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 5000Vrms 900% @ 500µA 8000% @ 500µA 330ns, 2.5µs - DC Darlington 18V 80mA 1.47V 20 mA - -40°C ~ 125°C Surface Mount
TLP109(IGM-TPR,E

TLP109(IGM-TPR,E

OPTOISO 3.75KV TRANS 6-SO 5 LEAD

Toshiba Semiconductor and Storage
3,498 -

RFQ

TLP109(IGM-TPR,E

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 3750Vrms 25% @ 10mA 75% @ 10mA 450ns, 450ns - DC Transistor 20V 8mA 1.64V 20 mA - -55°C ~ 125°C Surface Mount
TLX9309(TPL,F

TLX9309(TPL,F

IC COUPLER; 4-PIN SO6; AECQ; ROH

Toshiba Semiconductor and Storage
3,533 -

RFQ

TLX9309(TPL,F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active 1 3750Vrms 15% @ 7mA 300% @ 7mA - - DC Transistor - 25mA 1.6V 15 mA - -40°C ~ 125°C Surface Mount
TLP2531(F)

TLP2531(F)

OPTOISOLTR 2.5KV 2CH TRANS 8-DIP

Toshiba Semiconductor and Storage
3,049 -

RFQ

TLP2531(F)

Ficha técnica

Tube - Last Time Buy 2 2500Vrms 19% @ 16mA - 200ns, 300ns - DC Transistor 15V - 1.65V 25 mA - -55°C ~ 100°C Through Hole
TLP2530(F)

TLP2530(F)

OPTOISOLTR 2.5KV 2CH TRANS 8-DIP

Toshiba Semiconductor and Storage
2,807 -

RFQ

TLP2530(F)

Ficha técnica

Tube - Last Time Buy 2 2500Vrms 7% @ 16mA - 300ns, 500ns - DC Transistor 15V - 1.65V 25 mA - -55°C ~ 100°C Through Hole
TLX9905(TPL,F

TLX9905(TPL,F

PV COUPLER; 4-PIN SO6; AECQ; ROH

Toshiba Semiconductor and Storage
3,009 -

RFQ

TLX9905(TPL,F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active 1 3750Vrms - - 300µs, 1ms - DC Photovoltaic 7V - 1.65V 30 mA - -40°C ~ 125°C Surface Mount
TLP190B(TPR,U,C,F)

TLP190B(TPR,U,C,F)

OPTOISOLTR 2.5KV PHVOLT 6-MFSOP

Toshiba Semiconductor and Storage
3,256 -

RFQ

TLP190B(TPR,U,C,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Last Time Buy 1 2500Vrms - - 200µs, 1ms - DC Photovoltaic 8V 12µA 1.4V 50 mA - -40°C ~ 85°C Surface Mount
TLP785(F)

TLP785(F)

OPTOISOLATR 5KV TRANSISTOR 4-DIP

Toshiba Semiconductor and Storage
702 -

RFQ

TLP785(F)

Ficha técnica

Tube - Active 1 5000Vrms 50% @ 5mA 600% @ 5mA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.15V 60 mA 400mV -55°C ~ 110°C Through Hole
TLP785(Y,F)

TLP785(Y,F)

OPTOISOLATR 5KV TRANSISTOR 4-DIP

Toshiba Semiconductor and Storage
186 -

RFQ

TLP785(Y,F)

Ficha técnica

Tube - Active 1 5000Vrms 50% @ 5mA 150% @ 5mA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.15V 60 mA 400mV -55°C ~ 110°C Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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