Memoria

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
M5M5V108DVP-70H#BT

M5M5V108DVP-70H#BT

STANDARD SRAM, 128KX8, 70NS, CMO

Renesas
3,820 -

RFQ

M5M5V108DVP-70H#BT

Ficha técnica

Bulk * Active - - - - - - - - - - -
M5M5V108DKV-70HIST

M5M5V108DKV-70HIST

STANDARD SRAM, 128KX8, 70NS, CMO

Renesas
3,819 -

RFQ

M5M5V108DKV-70HIST

Ficha técnica

Bulk * Active - - - - - - - - - - -
HN58V66AFPI10E

HN58V66AFPI10E

HN58V66 - PARALLEL 64KBIT EEPROM

Renesas
2,854 -

RFQ

HN58V66AFPI10E

Ficha técnica

Bulk * Active - - - - - - - - - - -
R1Q3A7236ABB-33IB0

R1Q3A7236ABB-33IB0

STANDARD SRAM, 2MX36, 0.45NS, CM

Renesas
375 -

RFQ

R1Q3A7236ABB-33IB0

Ficha técnica

Bulk * Active - - - - - - - - - - -
R1Q4A3618CBB-33IA0

R1Q4A3618CBB-33IA0

R1Q4A3618 - STANDARD SRAM, 2MX18

Renesas
3,956 -

RFQ

Bulk - Obsolete Volatile SRAM SRAM - Synchronous, DDR II 36Mb (2M x 18) Parallel 300 MHz - 450 ps 1.7V ~ 1.9V -40°C ~ 85°C (TA) Surface Mount
UPD48288236AF1-E24-DW1-A

UPD48288236AF1-E24-DW1-A

UPD48288236AF1 - LOW LATENCY HIG

Renesas
2,993 -

RFQ

Bulk - Obsolete Volatile DRAM LLDRAM 288Mb (8M x 36) HSTL 400 MHz - 500 ps 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
UPD48576209F1-E24-DW1-E2-A

UPD48576209F1-E24-DW1-E2-A

UPD48576209 - DDR DRAM, 0.24NS

Renesas
2,263 -

RFQ

Bulk - Obsolete Volatile DRAM LLDRAM 576Mb (64M x 9) HSTL 400 MHz - - 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
UPD48576236F1-E18-DW1-A

UPD48576236F1-E18-DW1-A

UPD48576236F1 - LOW LATENCY HIGH

Renesas
3,444 -

RFQ

Bulk - Obsolete Volatile DRAM LLDRAM 576Mb (16M x 36) HSTL 533 MHz - 300 ps 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
UPD48576118F1-E18-DW1-A

UPD48576118F1-E18-DW1-A

UPD48576118F1 - LOW LATENCY HIGH

Renesas
2,314 -

RFQ

Bulk - Obsolete Volatile DRAM LLDRAM 576Mb (32M x 18) HSTL 533 MHz - 300 ps 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
R1LV3216RSA-5SI#BU

R1LV3216RSA-5SI#BU

R1LV3216R - LOW POWER SRAM, 2MX1

Renesas
494 -

RFQ

R1LV3216RSA-5SI#BU

Ficha técnica

Bulk * Active - - - - - - - - - - -
R1Q4A7218ABB-33IA0

R1Q4A7218ABB-33IA0

R1Q4A7218 - STANDARD SRAM, 2MX18

Renesas
2,674 -

RFQ

Bulk - Obsolete Volatile SRAM SRAM - Synchronous, DDR II 72Mb (4M x 18) Parallel 300 MHz - 450 ps 1.7V ~ 1.9V -40°C ~ 85°C (TA) Surface Mount
R1Q2A7236ABB-40IA0

R1Q2A7236ABB-40IA0

R1Q2A7236 - STANDARD SRAM, 2MX36

Renesas
3,938 -

RFQ

Bulk - Obsolete Volatile SRAM SRAM - Synchronous 72Mb (2M x 36) Parallel 250 MHz - 450 ps 1.7V ~ 1.9V -40°C ~ 85°C (TA) Surface Mount
M5M5256DFP-70LL#SM

M5M5256DFP-70LL#SM

STANDARD SRAM, 32KX8, 70NS, CMOS

Renesas
3,604 -

RFQ

M5M5256DFP-70LL#SM

Ficha técnica

Bulk * Active - - - - - - - - - - -
HN58V66AT10E

HN58V66AT10E

HN58V66 - PARALLEL 64KBIT EEPROM

Renesas
578 -

RFQ

HN58V66AT10E

Ficha técnica

Bulk * Active - - - - - - - - - - -
HN58V66ATI10E

HN58V66ATI10E

HN58V66 - PARALLEL 64KBIT EEPROM

Renesas
869 -

RFQ

HN58V66ATI10E

Ficha técnica

Bulk * Active - - - - - - - - - - -
HN58C256AP10E

HN58C256AP10E

HN58C256 - PARALLEL 256KBIT EEPR

Renesas
129 -

RFQ

HN58C256AP10E

Ficha técnica

Bulk * Active - - - - - - - - - - -
HN58C257AT85E

HN58C257AT85E

HN58C257 - PARALLEL 256KBIT EEPR

Renesas
101 -

RFQ

HN58C257AT85E

Ficha técnica

Bulk * Active - - - - - - - - - - -
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario