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Memoria
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | MemoryType | MemoryFormat | Technology | MemorySize | MemoryInterface | ClockFrequency | WriteCycleTime-WordPage | AccessTime | Voltage-Supply | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DS28E05X-S+TIC EEPROM 896B 1-WIRE 4WLP Analog Devices Inc./Maxim Integrated |
2,353 | - |
RFQ |
Tape & Reel (TR) | - | Active | Non-Volatile | EEPROM | EEPROM | 896b (112 x 8) | 1-Wire® | - | - | - | 1.71V ~ 3.63V | -40°C ~ 85°C (TA) | Surface Mount | |
|
DS28E05P+TIC EEPROM 896B 1-WIRE 6TSOC Analog Devices Inc./Maxim Integrated |
2,097 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | Non-Volatile | EEPROM | EEPROM | 896b (112 x 8) | 1-Wire® | - | - | 2 µs | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount |
|
DS28E05R+TIC EEPROM 896B 1-WIRE SOT23-3 Analog Devices Inc./Maxim Integrated |
2,306 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Non-Volatile | EEPROM | EEPROM | 896b (112 x 8) | 1-Wire® | - | - | 2 µs | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount |
|
|
DS28E05P+IC EEPROM 896B 1-WIRE 6TSOC Analog Devices Inc./Maxim Integrated |
2,573 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | EEPROM | EEPROM | 896b (112 x 8) | 1-Wire® | - | - | 2 µs | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount |
|
DS1225AB-85+IC NVSRAM 64KBIT PARALLEL 28EDIP Analog Devices Inc./Maxim Integrated |
104 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | Parallel | - | 85ns | 85 ns | 4.75V ~ 5.25V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1225AD-150IND+IC NVSRAM 64KBIT PARALLEL 28EDIP Analog Devices Inc./Maxim Integrated |
668 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | Parallel | - | 150ns | 150 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole |
|
|
DS1230Y-70IND+IC NVSRAM 256KBIT PAR 28EDIP Analog Devices Inc./Maxim Integrated |
2,642 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 70ns | 70 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole |
|
|
DS1230Y-120+IC NVSRAM 256KBIT PAR 28EDIP Analog Devices Inc./Maxim Integrated |
103 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 120ns | 120 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
DS1245AB-70+IC NVSRAM 1MBIT PARALLEL 32EDIP Analog Devices Inc./Maxim Integrated |
230 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | Parallel | - | 70ns | 70 ns | 4.75V ~ 5.25V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1245Y-100+IC NVSRAM 1MBIT PARALLEL 32EDIP Analog Devices Inc./Maxim Integrated |
143 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | Parallel | - | 100ns | 100 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1245Y-70IND+IC NVSRAM 1MBIT PARALLEL 32EDIP Analog Devices Inc./Maxim Integrated |
242 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | Parallel | - | 70ns | 70 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole |
|
|
DS1245Y-70+IC NVSRAM 1MBIT PARALLEL 32EDIP Analog Devices Inc./Maxim Integrated |
270 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | Parallel | - | 70ns | 70 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1250Y-70IND+IC NVSRAM 4MBIT PARALLEL 32EDIP Analog Devices Inc./Maxim Integrated |
103 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 4Mb (512K x 8) | Parallel | - | 70ns | 70 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole |
|
|
DS28E05GB+TIC EEPROM 896B 1-WIRE 2SFN Analog Devices Inc./Maxim Integrated |
2,389 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | Non-Volatile | EEPROM | EEPROM | 896b (112 x 8) | 1-Wire® | - | - | 2 µs | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount |
|
DS1270Y-70#IC NVSRAM 16MBIT PARALLEL 36EDIP Analog Devices Inc./Maxim Integrated |
285 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Mb (2M x 8) | Parallel | - | 70ns | 70 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
DS28E07+TIC EEPROM 1KBIT 1-WIRE TO92-3 Analog Devices Inc./Maxim Integrated |
2,008 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | Non-Volatile | EEPROM | EEPROM | 1Kb (256 x 4) | 1-Wire® | - | - | 2 µs | 3V ~ 5.25V | -40°C ~ 85°C (TA) | Through Hole |
|
DS1220AD-200+IC NVSRAM 16KBIT PARALLEL 24EDIP Analog Devices Inc./Maxim Integrated |
2,397 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Kb (2K x 8) | Parallel | - | 200ns | 200 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1220AB-200+IC NVSRAM 16KBIT PARALLEL 24EDIP Analog Devices Inc./Maxim Integrated |
201 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Kb (2K x 8) | Parallel | - | 200ns | 200 ns | 4.75V ~ 5.25V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1225AD-85+IC NVSRAM 64KBIT PARALLEL 28EDIP Analog Devices Inc./Maxim Integrated |
3,150 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | Parallel | - | 85ns | 85 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1225AD-200+IC NVSRAM 64KBIT PARALLEL 28EDIP Analog Devices Inc./Maxim Integrated |
933 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | Parallel | - | 200ns | 200 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
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