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| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | CoreType | Material | Diameter | InductanceFactor(Al) | Tolerance | Gap | EffectivePermeability(µe) | InitialPermeability(µi) | CoreFactor(ΣI/A)mm-1 | EffectiveLength(le)mm | EffectiveArea(Ae)mm² | MinimumCoreCrossSection(Amin)mm² | EffectiveMagneticVolume(Ve)mm³ | Finish | Height | Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AB2.8X4.5DYAMORPHOUS CORE - AMOBEAD Toshiba Semiconductor and Storage |
3,537 | - |
RFQ |
Bag | AB | Active | Rod | - | - | 0.157 (4.00mm) | - | - | Ungapped | - | - | - | - | - | - | - | Coated | 0.224 (5.70mm) | |
|
|
AB3X2X3DYAMORPHOUS CORE - AMOBEAD Toshiba Semiconductor and Storage |
3,977 | - |
RFQ |
Bag | AB | Active | Rod | - | - | 0.157 (4.00mm) | - | - | Ungapped | - | - | - | - | - | - | - | Coated | 0.165 (4.20mm) | |
|
|
AB4X2X6WAMORPHOUS CORE - AMOBEAD Toshiba Semiconductor and Storage |
2,024 | - |
RFQ |
Bag | AB | Active | Rod | - | - | 0.157 (4.00mm) | 12 µH | - | Ungapped | - | - | - | - | - | - | - | Coated | 0.236 (6.00mm) | |
|
|
MS21X14X4.5WAMORPHOUS CORE - MAGAMP Toshiba Semiconductor and Storage |
3,401 | - |
RFQ |
Bag | MS | Active | Toroid | - | - | - | - | - | Ungapped | - | - | - | - | 11.8 | - | - | Coated | 0.260 (6.60mm) |
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