Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
IV1D06006P3

IV1D06006P3

SIC DIODE, 650V 6A, DPAK

Inventchip
2,500 -

RFQ

IV1D06006P3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 224pF @ 1V, 1MHz 0 ns 10 µA @ 650 V 650 V 16.7A (DC) -55°C ~ 175°C 1.65 V @ 6 A
IV1D12020T2

IV1D12020T2

SIC DIODE, 1200V 20A, TO-247-2

Inventchip
120 -

RFQ

IV1D12020T2

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1114pF @ 1V, 1MHz 0 ns 120 µA @ 1200 V 1200 V 54A -55°C ~ 175°C 1.8 V @ 20 A
IV1D12010T2

IV1D12010T2

SIC DIODE, 1200V 10A, TO-247-2

Inventchip
120 -

RFQ

IV1D12010T2

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 575pF @ 1V, 1MHz 0 ns 50 µA @ 1200 V 1200 V 30A (DC) -55°C ~ 175°C (TJ) 1.8 V @ 10 A
IV1D12010O2

IV1D12010O2

SIC DIODE, 1200V 10A, TO-220-2

Inventchip
200 -

RFQ

IV1D12010O2

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 575pF @ 1V, 1MHz 0 ns 50 µA @ 1200 V 1200 V 28A (DC) -55°C ~ 175°C (TJ) 1.8 V @ 10 A
IV1D12015T2

IV1D12015T2

SIC DIODE, 1200V 15A, TO-247-2

Inventchip
120 -

RFQ

IV1D12015T2

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 888pF @ 1V, 1MHz 0 ns 80 µA @ 1200 V 1200 V 44A (DC) -55°C ~ 175°C 1.8 V @ 15 A
IV1D06006O2

IV1D06006O2

SIC DIODE, 650V 6A, TO-220-2

Inventchip
200 -

RFQ

IV1D06006O2

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 212pF @ 1V, 1MHz 0 ns 10 µA @ 650 V 650 V 17.4A (DC) -55°C ~ 175°C 1.65 V @ 6 A
IV1D12005O2

IV1D12005O2

SIC DIODE, 1200V 5A, TO-220-2

Inventchip
200 -

RFQ

IV1D12005O2

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 320pF @ 1V, 1MHz 0 ns 30 µA @ 1200 V 1200 V 17A (DC) -55°C ~ 175°C 1.8 V @ 5 A
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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