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Diodos - Rectificadores - Matrices

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
30JL2C41(F) DIODE ARRAY GP 600V 15A TO3P Toshiba Semiconductor and Storage	3,928	-	RFQ	Ficha técnica	Bulk	-	Obsolete	1 Pair Common Cathode	Standard	600 V	15A	2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 600 V	-40°C ~ 150°C	Through Hole
U20DL2C48A(TE24L,Q DIODE ARRAY GP 200V 20A TO220SM Toshiba Semiconductor and Storage	2,575	-	RFQ	Ficha técnica	Tape & Reel (TR)	-	Obsolete	1 Pair Common Cathode	Standard	200 V	20A	980 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 200 V	-	Surface Mount
1SS301SU,LF DIODE ARRAY GP 80V 100MA SC70 Toshiba Semiconductor and Storage	2,218	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	1 Pair Common Cathode	Standard	80 V	100mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	500 nA @ 80 V	125°C (Max)	Surface Mount
1SS360(T5L,F,T) DIODE ARRAY GP 80V 100MA SC75 Toshiba Semiconductor and Storage	2,934	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	1 Pair Common Anode	Standard	80 V	100mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	500 nA @ 80 V	125°C (Max)	Surface Mount
HN1D04FUTE85LF DIODE ARRAY GP 80V 100MA US6 Toshiba Semiconductor and Storage	3,615	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	2 Pair Series Connection	Standard	80 V	100mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	1.6 ns	500 nA @ 80 V	150°C (Max)	Surface Mount
1SS295(TE85L,F) DIODE ARRAY SCHOTTKY 4V SC59-3 Toshiba Semiconductor and Storage	3,272	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	1 Pair Series Connection	Schottky	4 V	30mA	320 mV @ 2 mA	Small Signal =< 200mA (Io), Any Speed	-	25 µA @ 500 mV	125°C (Max)	Surface Mount
HN2S03FE(TE85L,F) DIODE ARRAY SCHOTTKY 20V ES6 Toshiba Semiconductor and Storage	3,516	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	3 Independent	Schottky	20 V	50mA	550 mV @ 50 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 20 V	125°C (Max)	Surface Mount
HN2S03T(TE85L) DIODE ARRAY SCHOTTKY 20V TESQ Toshiba Semiconductor and Storage	3,766	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	2 Independent	Schottky	20 V	50mA	550 mV @ 50 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 20 V	125°C (Max)	Surface Mount
1SS302TE85LF DIODE ARRAY GP 80V 100MA SC70 Toshiba Semiconductor and Storage	3,355	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	1 Pair Series Connection	Standard	80 V	100mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	500 nA @ 80 V	125°C (Max)	Surface Mount
HN2D01FU(TE85L,F) DIODE ARRAY GP 80V 80MA US6 Toshiba Semiconductor and Storage	3,681	-	RFQ	Ficha técnica	Cut Tape (CT)	-	Active	3 Independent	Standard	80 V	80mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	500 nA @ 80 V	125°C (Max)	Surface Mount
TRS12N65D,S1F DIODE ARRAY SCHOTTKY 650V TO247 Toshiba Semiconductor and Storage	2,942	-	RFQ	Ficha técnica	Tube	-	Obsolete	1 Pair Common Cathode	Schottky	650 V	6A (DC)	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	90 µA @ 650 V	175°C (Max)	Through Hole
TRS16N65D,S1F DIODE ARRAY SCHOTTKY 650V TO247 Toshiba Semiconductor and Storage	3,234	-	RFQ	Ficha técnica	Tube	-	Obsolete	1 Pair Common Cathode	Schottky	650 V	8A (DC)	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	90 µA @ 650 V	175°C (Max)	Through Hole
TRS20N65D,S1F DIODE ARRAY SCHOTTKY 650V TO247 Toshiba Semiconductor and Storage	3,342	-	RFQ	Ficha técnica	Tube	-	Obsolete	1 Pair Common Cathode	Schottky	650 V	10A (DC)	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	90 µA @ 650 V	175°C (Max)	Through Hole
TRS24N65D,S1F DIODE ARRAY SCHOTTKY 650V TO247 Toshiba Semiconductor and Storage	3,007	-	RFQ	Ficha técnica	Tube	-	Obsolete	1 Pair Common Cathode	Schottky	650 V	12A (DC)	1.7 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	90 µA @ 650 V	175°C (Max)	Through Hole
1SS184S,LF(D DIODE ARRAY GP 80V 100MA SC59 Toshiba Semiconductor and Storage	2,225	-	RFQ	Ficha técnica	Tape & Reel (TR)	-	Obsolete	1 Pair Common Cathode	Standard	80 V	100mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	500 nA @ 80 V	125°C (Max)	Surface Mount
TRS12N65FB,S1F(S DODE SCHOTTKY 650V TO247 Toshiba Semiconductor and Storage	2,857	-	RFQ		Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	6A (DC)	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	175°C (Max)	Through Hole
TRS16N65FB,S1F(S DODE SCHOTTKY 650V TO247 Toshiba Semiconductor and Storage	3,304	-	RFQ		Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	8A (DC)	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	175°C (Max)	Through Hole
TRS20N65FB,S1F(S DODE SCHOTTKY 650V TO247 Toshiba Semiconductor and Storage	3,948	-	RFQ		Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	10A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	175°C (Max)	Through Hole
TRS24N65FB,S1F(S DODE SCHOTTKY 650V TO247 Toshiba Semiconductor and Storage	3,829	-	RFQ		Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	12A (DC)	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	175°C (Max)	Through Hole
1SS309(TE85L,F) DIODE ARRAY GP 80V 100MA SMV Toshiba Semiconductor and Storage	2,266	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	4 Common Cathode	Standard	80 V	100mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	500 nA @ 80 V	125°C (Max)	Surface Mount