Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
MSC50DC120HJ

MSC50DC120HJ

PM-DIODE-SIC-SBD-SOT227

Microchip Technology
3,480 -

RFQ

MSC50DC120HJ

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 1.2 kV - - 200 µA @ 1200 V -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC
APT60DF60HJ

APT60DF60HJ

BRIDGE RECT 1P 600V 90A SOT227

Microchip Technology
2,262 -

RFQ

APT60DF60HJ

Ficha técnica

Bulk - Active Single Phase Standard 600 V 90 A 2.3 V @ 60 A 25 µA @ 600 V -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC
APT50DF170HJ

APT50DF170HJ

BRIDGE RECT 1P 1.7KV 50A SOT227

Microchip Technology
186 -

RFQ

APT50DF170HJ

Ficha técnica

Bulk - Active Single Phase Standard 1.7 kV 50 A 2.2 V @ 50 A 250 µA @ 1700 V -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC
APTDR90X1601G

APTDR90X1601G

BRIDGE RECT 3PHASE 1.6KV 90A SP1

Microchip Technology
2,586 -

RFQ

APTDR90X1601G

Ficha técnica

Bulk - Active Three Phase Standard 1.6 kV 90 A 1.3 V @ 90 A 50 µA @ 1600 V -40°C ~ 150°C (TJ) Chassis Mount SP1
MSCDC50H701AG

MSCDC50H701AG

PM-DIODE-SIC-SBD-SP1F

Microchip Technology
2,296 -

RFQ

MSCDC50H701AG

Ficha técnica

Tube - Active Three Phase Silicon Carbide Schottky 700 V - - 200 µA @ 700 V -40°C ~ 175°C (TJ) Chassis Mount Module
APTDF200H60G

APTDF200H60G

BRIDGE RECT 1PHASE 600V 270A SP6

Microchip Technology
2,904 -

RFQ

APTDF200H60G

Ficha técnica

Bulk - Active Single Phase Standard 600 V 270 A 2 V @ 200 A 350 µA @ 600 V -40°C ~ 175°C (TJ) Chassis Mount SP6
MSCDC50X1201AG

MSCDC50X1201AG

PM-DIODE-SIC-SBD-SP1F

Microchip Technology
2,579 -

RFQ

MSCDC50X1201AG

Ficha técnica

Tube - Active Three Phase Silicon Carbide Schottky 1.2 kV - - 200 µA @ 1200 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC50X1701AG

MSCDC50X1701AG

PM-DIODE-SIC-SBD-SP1F

Microchip Technology
3,469 -

RFQ

MSCDC50X1701AG

Ficha técnica

Tube - Active Three Phase Silicon Carbide Schottky 1.7 kV - - 200 µA @ 1700 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC200H120AG

MSCDC200H120AG

PM-DIODE-SIC-SBD-SP6C

Microchip Technology
2,276 -

RFQ

MSCDC200H120AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 1.2 kV - - 800 µA @ 1200 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC200H170AG

MSCDC200H170AG

PM-DIODE-SIC-SBD-SP6C

Microchip Technology
3,742 -

RFQ

MSCDC200H170AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 1.7 kV - - 800 µA @ 1700 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSC50DC70HJ

MSC50DC70HJ

PM-DIODE-SIC-SBD-SOT227

Microchip Technology
3,697 -

RFQ

MSC50DC70HJ

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 700 V - - 200 µA @ 700 V -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC
MSCDC50X701AG

MSCDC50X701AG

PM-DIODE-SIC-SBD-SP1F

Microchip Technology
2,466 -

RFQ

MSCDC50X701AG

Ficha técnica

Tube - Active Three Phase Silicon Carbide Schottky 700 V - - 200 µA @ 700 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC50H1701AG

MSCDC50H1701AG

PM-DIODE-SIC-SBD-SP1F

Microchip Technology
3,778 -

RFQ

MSCDC50H1701AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 1.7 kV - - 200 µA @ 1700 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC100H70AG

MSCDC100H70AG

PM-DIODE-SIC-SBD-SP6C

Microchip Technology
3,189 -

RFQ

MSCDC100H70AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 700 V - - 400 µA @ 700 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC100H120AG

MSCDC100H120AG

PM-DIODE-SIC-SBD-SP6C

Microchip Technology
2,306 -

RFQ

MSCDC100H120AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 1.2 kV - - 400 µA @ 1200 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC200H70AG

MSCDC200H70AG

PM-DIODE-SIC-SBD-SP6C

Microchip Technology
2,660 -

RFQ

MSCDC200H70AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 700 V - - 800 µA @ 700 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSCDC50H1201AG

MSCDC50H1201AG

PM-DIODE-SIC-SBD-SP1F

Microchip Technology
3,282 -

RFQ

MSCDC50H1201AG

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 1.2 kV - - 200 µA @ 1200 V -40°C ~ 175°C (TJ) Chassis Mount Module
MSC50DC170HJ

MSC50DC170HJ

PM-DIODE-SIC-SBD-SOT227

Microchip Technology
3,879 -

RFQ

MSC50DC170HJ

Ficha técnica

Tube - Active Single Phase Silicon Carbide Schottky 1.7 kV - - 200 µA @ 1700 V -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC
APT40DR160HJ

APT40DR160HJ

BRIDGE RECT 1P 1.6KV 40A SOT227

Microchip Technology
3,401 -

RFQ

APT40DR160HJ

Ficha técnica

Bulk - Active Single Phase Standard 1.6 kV 40 A 1.3 V @ 40 A 20 µA @ 1600 V -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC
APT100DL60HJ

APT100DL60HJ

BRIDGE RECT 1P 600V 100A SOT227

Microchip Technology
3,911 -

RFQ

APT100DL60HJ

Ficha técnica

Bulk - Active Single Phase Standard 600 V 100 A 2 V @ 100 A 250 µA @ 600 V -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC
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1500+ Promedio diario de RFQ
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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